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Sputtering System
Sputtering System (Realization of high uniform thin film thickness)
Application : Semiconductor, LED, SAW Filter
Highly thickness uniform of deposition film (≤0.5%@40nm) / High productivity (4”wafer 6ea Loading)
Deposition of various materials (Metal(Ti, Al, Cu..), Oxide(SiO2))
Substrate : Wafer & Glass
System type : Cluster Type (Loadlock & Unloadlok / Process / Transfer chamber), Option items (Plasma treatment, Degassing chamber)
- Wafer Size : 2inch~6inch
- Process Application : Thin film(Metal, Oxide), Seed Metal(Ti, Cu..)
- Loading Capacity : Cassette(4”wafer x 24ea), PM(4”wafer x 6ea), Wafer transfer by vacuum robot
- Cathode Type : Round Magnetron cathode
Sputtering System (Seed Metal)
Application : Semiconductor, LED, SAW Filter
Thickness uniformity(≤5%) / High productivity (4”wafer 8ea Loading)
Metal(Ti, Al, Cu..) material deposition
Substrate : Wafer & Glass
System type : Cluster Type (Loadlock & Unloadlok / Process / Transfer chamber), Option items (Plasma treatment, Degassing chamber)
- Wafer Size : 2inch~6inch
- Wafer Type : Si, LT Wafer(180~250㎛)
- Process Application : Seed Metal(SAW Filter)
- Loading Capacity : Cassette(4”wafer x 24ea), PM(4”wafer x 8ea), Wafer transfer by vacuum robot
- Cathode Type : Round Magnetron cathode
| Items | Specifications |
|---|---|
| System control | PC Control, Full Automation |
| System type | Cluster type |
| Configuration | 2 Load/Unloadlock Chamber / 1 Plasma treatment Chamber 1 Transfer Chamber / 2 Process Chamber(Ti, Cu) |
| System foot-print | 5,500(W)×5,000(D)×2,000(H)mm (Include maintenance area) |
| Substrate size | 4Inch LT Wafer (2 ~ 6Inch) |
| Loading capacity | L/L & UL/L Chamber : Wafer 24ea loading (Standard cassette) Plasma treatment Chamber : Wafer 8ea loading Process Chamber : Wafer 8ea loading |
| Substrate transfer | Vacuum robot (In Transfer chamber) |
| Thin film material | Metal (Ti, Cu..) |
| Sputtering source | 8Inch Round type magnetron gun : 1Chamber 2sets (Ti, Cu) |
| Substrate & Disk motion | Substrate rotation & Disk revolution |
| Plasma treatment | ICP+RF Bias type |
| Vacuum performance | Ultimate pressure : ≤ 5.0E-7 Torr (within 24hrs) |
| Thickness uniformity | ≤ 1.5% @300nm |
| Deposition rate | 5Å/s ~ 20Å/s |
| Contact angle | ≤ 5° |
- Wafer Size : 2inch~6inch
- Wafer Type : Si, LT Wafer(180~250㎛)
- Process Application : Seed Metal(SAW Filter)
- Loading Capacity : Cassette(4”wafer x 24ea), PM(4”wafer x 8ea), Wafer transfer by vacuum robot
- Cathode Type : Round Magnetron cathode